IPC80N04S4-03 optimos tm -t2 power-transistor features ? n-channel - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? green product (rohs compliant) ? 100% avalanche tested ? feasible for automatic optical inspection (aoi) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25c, t j =175c, v gs =10v 80 1) a t c =100 c, t j =175c, v gs =10 v 67 1, 2) pulsed drain current 2) i d,pulse t c =25 c 320 avalanche energy, single pulse e as i d =40 a 215 mj avalanche current, single pulse i as - 80 a gate source voltage v gs -+/-20v power dissipation p tot t c =25 c, t j =175c 100 w operating and storage temperature t j , t stg - -55 ... +175 3) c value v ds 40 v r ds(on) 3.3 m ? i d 80 a product summary pg-tdson-8-23 type package marking IPC80N04S4-03 pg-tdson-8-23 4n0403 1 1 r ev. 1.0 page 1 2015-05-22
IPC80N04S4-03 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc ---1.5k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 60a 2.0 3.0 4.0 zero gate voltage drain current i dss v ds =40 v, v gs =0 v, t j =25 c -0.011a v ds =18 v, v gs =0 v, t j =85 c 2) -120 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d = 40a -33.3 m ? values r ev. 1.0 page 2 2015-05-22
IPC80N04S4-03 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 4400 5720 pf output capacitance c oss - 1020 1330 reverse transfer capacitance c rss -3377 turn-on delay time t d(on) -14-ns rise time t r -7- turn-off delay time t d(off) -15- fall time t f -13- gate char g e characteristics 2) gate to source charge q gs -2432nc gate to drain charge q gd -818 gate charge total q g -5571 gate plateau voltage v plateau -5.6-v reverse diode diode continous forward current 2) i s --80a diode pulse current 2) i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =40 a, t j =25 c -0.91.3v reverse recovery time 2) t rr -45-ns reverse recovery charge 2) q rr -45-nc 2) defined by design. not subject to production test. 3) t j > 150c is limited to 200h operation time over life time of the device 1) current is limited by package; with an r thjc = 1.5 k/w the chip is able to carry 134a at 25c. values v gs =0 v, v ds =25 v, f =1 mhz v dd =20 v, v gs =10 v, i d =80 a, r g =3.5 ? v dd =32 v, i d =80 a, v gs =0 to 10 v v r =20 v, i f =50a, d i f /d t =100 a/s t c =25 c r ev. 1.0 page 3 2015-05-22
IPC80N04S4-03 1 power dissipation 2 drain current p tot = f( t c ); v gs = 10 v i d = f( t c ); v gs = 10 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 150 s 1 10 100 1000 0.1 1 10 100 i d [a] v ds [v] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 z thjc [k/w] t p [s] 0 20 40 60 80 100 120 0 50 100 150 200 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 i d [a] t c [ c] r ev. 1.0 page 4 2015-05-22
IPC80N04S4-03 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 40 a; v gs = 10 v parameter: t j 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -60 -20 20 60 100 140 180 r ds(on) [m ? ] t j [ c] -55 c 25 c 175 c 0 80 160 240 320 345678 i d [a] v gs [v] 5 v 5.5 v 6 v 6.5 v 10 v 7 v 0 80 160 240 320 01234 i d [a] v ds [v] 5 v 6 v 5.5 v 6.5 v 7 v 2 4 6 8 10 12 14 0 20406080 r ds(on) [m ? ] i d [a] 10 v r ev. 1.0 page 5 2015-05-22
IPC80N04S4-03 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i as = f( t av ) parameter: t j parameter: t j(start) 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] ciss coss crss 10 1 10 2 10 3 10 4 0 10203040 c [pf] v ds [v] 60 a 600 a 1.2 1.6 2 2.4 2.8 3.2 3.6 4 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] r ev. 1.0 page 6 2015-05-22
IPC80N04S4-03 13 typical avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 80 a pulsed parameter: v dd 32 36 40 44 48 52 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 8 v 32 v 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 v gs [v] q gate [nc] 80 a 40 a 20 a 0 100 200 300 400 25 75 125 175 e as [mj] t j [ c] v gs q gate q gs q gd q g v gs q gate q gs q gd q g r ev. 1.0 page 7 2015-05-22
IPC80N04S4-03 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2015 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.0 page 8 2015-05-22
IPC80N04S4-03 revision history version revision 1.0 changes final data sheet date 2015-05-22 r ev. 1.0 page 9 2015-05-22
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